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Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS) is a highly sensitive surface analysis technique that provides elemental, chemical state, and molecular information from solid material surfaces. It works by bombarding a sample surface with a pulsed, focused ion beam, which causes secondary ions and ion clusters to be emitted from the sample's outermost atomic layers.

These secondary ions are then accelerated into a "flight tube" and their mass is determined by measuring the exact time they take to reach the detector, allowing for the identification of elements, isotopes, and molecular fragments. TOF-SIMS offers high mass resolution, sub-micron imaging capabilities, and the ability to perform depth profiling, making it a powerful tool for analyzing thin films, nanomaterials, and complex surface structures in various fields including materials science, semiconductors, and biomedical research.

Uses & Capabilities

This  piece of equipment could be used for:

  • Quality assurance, failure analysis, and process control in semiconductor manufacturing. It identifies contaminants, defects, and impurities that may affect device performance and reliability. It can be used for monitoring surface changes and chemical alterations throughout the fabrication, etching, deposition, and packaging processes, ensuring product quality and uniformity.
  • Characterisation of the surface chemistry and composition of various materials, including metals, semiconductors, polymers, ceramics, and composites. Particularly useful for thin films, coatings, and multilayered structures used in optical, protective, and electronic devices.
  • Analysis of drug formulations, study drug delivery systems, and examine the surface chemistry of medical devices and implants. It provides crucial information about material-cell interactions, biocompatibility, and degradation mechanisms, which is essential for developing safer and more effective biomedical implants and devices.
  • Environmental monitoring and analysis, particularly for identifying and quantifying pollutants, contaminants, and trace elements in soil, water, and air samples. This application is crucial for industries involved in environmental remediation, pollution control, and regulatory compliance. It's also valuable for quality control processes across various industries, helping to detect and analyze surface contaminants and impurities.

Features

The IONTOF TOF.SIMS5 is a state-of-the-art Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS) instrument designed for high-performance surface analysis. This device operates under ultra-high vacuum conditions and uses a pulsed primary ion beam to bombard the sample surface, generating secondary ions that are then analysed to provide detailed chemical information about the sample's outermost layers.

Key features include

  • High Mass Resolution: The instrument features a reflectron-type Time-of-Flight analyzer with a path length of approximately 2 meters, enabling mass resolutions often exceeding 10,000 (m/Δm).
  • Multiple Ion Sources: It is equipped with a 25 keV Bi primary ion beam for analysis and various sputter ion beams for depth profiling.
  • Cluster Ion Beam: The instrument includes an Arn+ cluster ion beam for enhanced molecular analysis and depth profiling of organic materials.
  • High Sensitivity: Due to its high transmission and parallel detection of all masses, the TOF analyzer can detect elements and molecules in the parts per million to parts per billion range.
  • 2D and 3D Chemical Imaging: The TOF.SIMS5 can generate detailed 2D and 3D chemical maps of sample surfaces with high spatial resolution.
  • Versatile Sample Stage: The instrument is equipped with a 5-axis stage for precise sample positioning and analysis.
  • Depth Profiling Capabilities: It can perform depth profiling to analyze the chemical composition of samples as a function of depth.
  • Wide Application Range: The TOF.SIMS5 is suitable for analyzing a variety of materials, including organic, inorganic, polymeric, and biological samples.

Specifications

  • Ion Gun: standard Bi+ (Cs+, C60+ options)
  • Mass Analyzer: ION TOF reflection energy compensating TOF mass analyzer with approximately 2 meter path length.
  • Analytical specification: Mass range 0-10,000 amu, Mass resolution >10000, Spatial resolution <300nm
  • Beam Energy: 25 kV Bi+, 10 kV Cs+ and C60+
  • Pulse Width: <1 ns bunched
  • Analyzer Control Electronics: Bipolar supply for the focusing and steering elements, Electron gun for charge neutralization.
  • Detector: Optical microchannel plate with phosphor screen/photomultiplier, Electronics 2048–stop Time-to-Digital converter with 50 ps minimum time resolution, Supply  Channel plate multiplier with post acceleration bias with integrated pulsing and bunching
  • Stage: 5 axis motorized stage: X, Y, Z, tilt, rotation